PART |
Description |
Maker |
VMO550-01F |
HiPerFET MOSFET Module 590 A, 100 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET MOSFET Modules
|
IXYS, Corp. IXYS[IXYS Corporation]
|
BR211-280 BR211 BR211-140 BR211-160 BR211-180 BR21 |
Breakover diodes 314 V, SYMMETRICAL BOD MOSFET N-CH 500V 3A TO-220 MOSFET N-CH 600V 2A TO-220 MOSFET N-CH 1.2KV 3A TO-220AB MOSFET N-CH 500V 1A TO-220
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
NTE2942 |
30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET MOSFET N-Channel, Enhancement Mode High Speed Switch
|
NTE Electronics, Inc. NTE[NTE Electronics]
|
IRFP17N50LPBF |
SMPS MOSFET HEXFET?Power MOSFET SMPS MOSFET HEXFET㈢Power MOSFET
|
International Rectifier
|
IRF3708SPBF IRF3708PBF IRF3708LPBF |
SMPS MOSFET HEXFET㈢Power MOSFET SMPS MOSFET HEXFET?Power MOSFET
|
International Rectifier
|
SUP85N08-08 SUB85N08-08 |
N-Channel 75-V (D-S) 175 Degree Celcious MOSFET N通道75 - V(下副秘书长175度Celcious MOSFET N-Channel 75-V (D-S) 175C MOSFET N通道75 - V(下副秘书长75荤MOSFET N-Channel MOSFET N-Channel 75-V (D-S) 175C MOSFET
|
Vishay Intertechnology, Inc. VISAY[Vishay Siliconix]
|
VRF152E VRF152EMP VRF152E10 |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 150; P(in) (W): 6; Gain (dB): 14; VDD (V): 50; Coss (pF): 220; Case Style: M174 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET RF POWER VERTICAL MOSFET
|
Microsemi, Corp. Microsemi Corporation
|
VRF150 VRF15010 VRF150MP |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 150; P(in) (W): 15; Gain (dB): 10; VDD (V): 50; Coss (pF): 240; Case Style: M174 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET RF POWER VERTICAL MOSFET
|
Microsemi, Corp. Microsemi Corporation
|
IRLL024NQ IRLL024NQTRPBF |
3.1 A, 55 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET HEXFET? Power MOSFET HEXFET㈢ Power MOSFET 55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
International Rectifier
|
IRF7807VPBF IRF7807VTRPBF IRF7807VPBF-15 |
HEXFET? Power MOSFET HEXFET㈢ Power MOSFET N Channel Application Specific MOSFET
|
IRF[International Rectifier]
|